High frequency oscillation in photonic crystal nanolasers
Identifieur interne : 00A494 ( Main/Repository ); précédent : 00A493; suivant : 00A495High frequency oscillation in photonic crystal nanolasers
Auteurs : RBID : Pascal:04-0184242Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We observed modulated oscillations in lasers of up to 130 GHz by conducting frequency domain measurements on photonic crystal lasers with built-in saturable absorbers. This is an example of how the small volumes of photonic crystal lasers lead to increases in the internal modulation frequencies and enables dramatic improvements of the laser modulation rate. © 2004 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00B983
Links to Exploration step
Pascal:04-0184242Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High frequency oscillation in photonic crystal nanolasers</title><author><name sortKey="Yoshie, Tomoyuki" uniqKey="Yoshie T">Tomoyuki Yoshie</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125-9300</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical Engineering, California Institute of Technology, Pasadena</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Jet Propulsion Laboratory, California Institute of Technology, Pasadena</wicri:cityArea></affiliation></author><author><name sortKey="Loncar, Marko" uniqKey="Loncar M">Marko Loncar</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125-9300</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical Engineering, California Institute of Technology, Pasadena</wicri:cityArea></affiliation></author><author><name sortKey="Scherer, Axel" uniqKey="Scherer A">Axel Scherer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125-9300</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical Engineering, California Institute of Technology, Pasadena</wicri:cityArea></affiliation></author><author><name sortKey="Qiu, Yueming" uniqKey="Qiu Y">Yueming Qiu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125-9300</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Electrical Engineering, California Institute of Technology, Pasadena</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0184242</idno><date when="2004-05-03">2004-05-03</date><idno type="stanalyst">PASCAL 04-0184242 AIP</idno><idno type="RBID">Pascal:04-0184242</idno><idno type="wicri:Area/Main/Corpus">00B983</idno><idno type="wicri:Area/Main/Repository">00A494</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Microcavity lasers</term><term>Optical modulation</term><term>Photonic crystals</term><term>Quantum well lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255T</term><term>4255P</term><term>4255S</term><term>4270Q</term><term>4260F</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Cristal photonique</term><term>Laser microcavité</term><term>Laser puits quantique</term><term>Modulation optique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We observed modulated oscillations in lasers of up to 130 GHz by conducting frequency domain measurements on photonic crystal lasers with built-in saturable absorbers. This is an example of how the small volumes of photonic crystal lasers lead to increases in the internal modulation frequencies and enables dramatic improvements of the laser modulation rate. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>18</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>High frequency oscillation in photonic crystal nanolasers</s1></fA08><fA11 i1="01" i2="1"><s1>YOSHIE (Tomoyuki)</s1></fA11><fA11 i1="02" i2="1"><s1>LONCAR (Marko)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHERER (Axel)</s1></fA11><fA11 i1="04" i2="1"><s1>QIU (Yueming)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, California Institute of Technology, Pasadena, California 91125-9300</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109</s1></fA14><fA20><s1>3543-3545</s1></fA20><fA21><s1>2004-05-03</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0184242</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We observed modulated oscillations in lasers of up to 130 GHz by conducting frequency domain measurements on photonic crystal lasers with built-in saturable absorbers. This is an example of how the small volumes of photonic crystal lasers lead to increases in the internal modulation frequencies and enables dramatic improvements of the laser modulation rate. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B55P</s0></fC02><fC02 i1="03" i2="3"><s0>001B40B55S</s0></fC02><fC02 i1="04" i2="3"><s0>001B40B70Q</s0></fC02><fC02 i1="05" i2="3"><s0>001B40B60F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255T</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>4255S</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>4270Q</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>4260F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Cristal photonique</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Photonic crystals</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Laser microcavité</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Microcavity lasers</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Modulation optique</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Optical modulation</s0></fC03><fN21><s1>124</s1></fN21><fN47 i1="01" i2="1"><s0>0417M000156</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00A494 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00A494 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:04-0184242
|texte= High frequency oscillation in photonic crystal nanolasers
}}
| This area was generated with Dilib version V0.5.77. |  |